Abstract
Pt/Y 0.5 Yb 0.5 MnO 3 /HfO 2 /Si structures were constructed by chemical solution deposition. The Y 0.5 Yb 0.5 MnO 3 films were prepared using the solutions with different concentrations. The grain size and the degree of the c-axis orientation of the Y 0.5 Yb 0.5 MnO 3 films changed with the concentration of solutions used. The clockwise C-V hysteresis induced by ferroelectric polarization switching was observed and the memory window of Pt/Y 0.5 Yb 0.5 MnO 3 /HfO 2 /Si structures changed with the concentration of solutions used. The retention time of Pt/Y 0.5 Yb 0.5 MnO 3 /HfO 2 /Si structures were over 104s.