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SECTION E: INTEGRATED FERROELECTRICS

13.56 and 100 MHz Coupled Mode Rf-Sputtering for Ferroelectric Sr2(Ta1 − x,Nbx)2O7 (STN) Film Applied to One-Transistor Type Ferroelectric Random Access Memory

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Pages 90-95 | Received 28 Aug 2007, Accepted 10 Apr 2008, Published online: 20 Sep 2010
 

Abstract

We have formed ferroelectric Sr 2 (Ta 1 − x ,Nb x ) 2 O 7 (STN) film by using our developed 13.56 and 100 MHz coupled mode rf-sputtering system. For forming ferroelectric STN [perovskite Sr 2 (Ta 1 − x ,Nb x ) 2 O 7 phase], Ta and Nb are oxidized to a pentad, i.e., (Ta 1 − x ,Nb x ) 2 O 5 needs to be formed. The oxidations of Ta and Nb to pentad are difficult, because their ionization energies are very large. This means that oxygen vacancies exist in the films. We have successfully formed STN film whose oxygen vacancies are reduced by the coupled mode rf-sputtering system.

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