Abstract
Dissipation-limited motion of 90-degree domain walls in a defect-free BaTiO 3 crystal under external electric field is investigated by computer simulations in the framework of Landau-Khalatnikov equation of motion and generalized Ginzburg-Landau-Devonshire model. Domain wall mobility determined directly from simulation of frequency dependent dielectric response is shown to be in a reasonable agreement with simple analytical estimates.
Acknowledgments
This work has been supported by the Grant Agency of the Czech Republic (project 202/06/0411).