Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin Film

Abstract

Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 10 ⁴ ) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 10 ⁴ s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 10 ⁶ s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application

Keywords:

• RRAM
• bismuth titanate oxide (BTO)
• sol-gel method

Acknowledgments

This work was supported by the National Science Council, Taiwan, under project No. NSC96–2628-E-009–166-MY3.