Abstract
The 0.95Pb(Sc 0.5 Ta 0.5 )O 3 -0.05%PbTiO 3 (PSTT5) thin films were deposited on LSCO/Pt/SiO 2 /Si(110) substrate by magnetron sputtering. The samples were annealed at 650°C∼ 850°C in a rapid thermal annealing (RTA) furnace from 1∼ 6 minutes. The x-ray diffraction patterns show that the PSTT5 films were (220) preferred orientation after annealing at 850°C for 1 min. This films possess dielectric constant ϵ r = 450 with loss tgδ = 0.118 at 1kHz. Ferroelectric hysteresis loop of this films showed the remanent polarization 2P r and the coercive field 2E c were 40 μ C/cm 2 , 85 kV/cm, respectively. The leakage currents of the films at ± 80 kV/cm were in the order of 10−5A/cm 2 .
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Acknowledgment
This work was supported by the Natural Science Foundation of China (NSFC) (60771066) and National Key Project of China (G200709).