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Abstract
Nd/Nb doped Bi 4 Ti 3 O 12 , Bi 3.2 Nd 0.8 Ti 3 − x Nb x O 12 (x = 0.0∼0.15) ceramics, were synthesize by solid state reaction method. The effect of Nb doping on dielectric and ferroelectric properties were investigated. Nb doping decreased the Curie temperature and strong low-frequency dielectric dispersion of Bi 4 Ti 3 O 12 . With increasing Nb doping, the remnant polarization, P r , increased up to x = 0.05 and the maximum P r reach to 12.05 μC/cm 2 , which is higher than that of Bi 4 Ti 3 O 12 of 5.2 μC/cm 2 . The appropriate Nb doping decreased the conductivity and improved the ferroelectric properties.
Acknowledgments
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-313-C00209). And also this work was partially supported by grants-in-aid for the National Core Research Center Program from MOST/KOSEF (No. R15-2006-022-03001-0).