Abstract
The microstructure and ferroelectric properties of Bi 3.25 La 0.75 Ti 3 O 12 films prepared by photochemical metal-organic deposition using photosensitive precursors were characterized. The diffraction intensities showed a distribution similar to Bi 3.25 La 0.75 Ti 3 O 12 ceramics, and Pt(111) was found to not influence the growth orientation of Bi 3.25 La 0.75 Ti 3 O 12 films. The values of measured remnant polarization and dielectric constant of Bi 3.25 La 0.75 Ti 3 O 12 films annealed at 650 and 700°C were 8.7, 16.0 μC/cm 2 and 172, 276, respectively. The films remained free of fatigue up to 10 9 switching cycles. These results suggest the possible application of ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 film, relatively easily and without high cost process such as dry etching.
Acknowledgments
This research has been supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr), a 21st Century Frontier R&D Project sponsored by the Korea Ministry of Science and Technology. This work was also supported by the Second Stage of Brain Korea 21 Project in 2007. The experiments at the PLS were supported in part by the MOST and the POSTECH.