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Abstract
Highly (111) oriented PbZr 0.40 Ti 0.60 O 3 (PZT) thin films have been fabricated on BaPbO 3 /Pt electrodes by a multi-target reactive sputtering. The growth characteristics of the PZT films have been found to be highly influenced by the BaPbO 3 thickness. The PZT films deposited on 12 nm BaPbO 3 show a high remnant polarization (≈ 40 μC/cm 2 ) and relatively low leakage current as compared to the PZT deposited on 30 and 60 nm thick BaPbO 3 electrodes. A cross-sectional analysis of the PZT/BaPbO 3 (12 nm) structure by a high resolution transmission electron microscope shows a quasi epitaxial growth of PZT on BaPbO 3 electrode layer.
Acknowledgments
This work was supported by the German Research Foundation (Deutsche Forschungsgemeinschaft) as part of the Research Group FOR 520.
Notes
**Current affiliation: Research Department Integrity of Small-Scale Systems IS3/High Temperature Materials HTM, Ruhr-University Bochum, 44780 Bochum, Germany. Tel./Fax: +49 234 32 27875/14409.