Abstract
Investigations of the temperature dependence (30–550°C) of dielectric permittivity of AgTaO3 single crystals, stress-free and under the stress (0–1000 bar), has been carried out. It was found that dielectric properties of AgTaO3 are sensitive to applied stress. This includes the shift of phase transition, increase in the permittivity and it makes the permittivity anomalies more effective. These effects can be caused by changes in the domain structure, the change of inter-ionic distances, change in density of defects and change in the electric conductivity under the action of uniaxial pressure. The use of the AgTaO3 for device application has also been indicated.