Dielectric Properties of La(Mg_0.5Sn_0.5)O₃ Ceramics Doped with V₂O₅ at Microwave Frequencies

Abstract

In this study, the microwave dielectric properties of V₂O₅-doped La(Mg_0.5Sn_0.5)O₃ ceramics have been investigated for application in microwave devices. La(Mg_0.5Sn_0.5)O₃ ceramics were synthesized by conventional mixed-oxide method and V₂O₅ was selected as a liquid sintering aid to lower the sintering temperature of La(Mg_0.5Sn_0.5)O₃ ceramics. It was found that the X-ray diffraction patterns of the La(Mg_0.5Sn_0.5)O₃ ceramics exhibited no significant phase difference with addition levels below 2.5 wt% at different sintering temperatures. The maximum values of the dielectric constant and the quality factor multiples resonant frequency can be obtained when the La(Mg_0.5Sn_0.5)O₃ with 0.5 wt% V₂O₅ additive were sintered at 1500°C for 4h. The temperature coefficient of resonant frequency (−87.5 ppm/°C) was measured for La(Mg_0.5Sn_0.5)O₃ ceramics with 0.5 wt% V₂O₅ sintered at 1500°C for 4 h.

Keywords:

• La(Mg_0.5Sn_0.5)O₃
• dielectric constant
• quality factor
• temperature coefficient of resonant frequency

Acknowledgment

This work was supported by the National Science Council of the Republic of China under Grant NSC 97-2221-E-262-001.