Growth of the Relaxor Based Ferroelectric Single Crystals Pb(In_1/2Nb_1/2)O₃- Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ by Vertical Bridgman Technique

Abstract

The relaxor-based ferroelectric single crystals Pb(In_1/2Nb_1/2)O₃- Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ were grown successfully using the vertical Bridgman technique. The crystals were spontaneously nucleated and induced to grow by the seed respectively, with diameter of Ø25–40 mm and length of 80–170 mm. The [001]-oriented wafers of as-grown crystals showed the excellent electrical characterizations (ϵ∼5500, tanδ∼1.35%, d₃₃ ∼1900pC/N, k₃₃∼0.9). Both the higher rhombohedral-tetragonal phase transition temperature (T_r/t ∼100–120°C) and Curie temperature (T_c ∼170–200°C) enlarged the operating temperature range of the devices. The crystals had the stable time dependence of piezoelectric properties. Therefore, the successful growth and high performance made the crystal be a promising candidate for the ultrasonic applications.

Keywords:

• Bridgman technique
• single crystal
• crystal growth
• electrical characterization
• ultrasonic application

Acknowledgment

This work supported by the funds, such as the National Basic Research Program of China (973 Program, Grant No. 2009CB623306), the National Natural Science Foundation of China (Grant No. 60528008) and the Key Science and Technology Research Project from the Ministry of Education of China (Grant No. 108180).