Abstract
We have carried out a detailed investigation on the quantum effect on SrRuO3/BaTiO3/SrRuO3 ferroelectric ultrathin film capacitors fully strained with a SrTiO3 substrate. We employ the transverse field Ising model, taking into account the incomplete charge compensation of the realistic SrRuO3 electrode and the misfit strain imposed by the SrTiO3 substrate in the Hamiltonian, to quantitatively explain the experimental observation in the literature. It is found that quantum mechanism under the influence of the incomplete charge compensation of the electrode plays an important role in determining the ferroelectric properties of BaTiO3 ultrathin films between two metallic electrodes.
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Acknowledgments
This work was supported by the Natural Science Foundation of China under contract No. 10747114 and Shanghai Educational Development Foundation under contract No. 2007CG43.