Abstract
In this work we studied 65nm-thick poly(vinylidene fluoride-trifluoroethylene) ferroelectric polymers P(VDF-TrFE) films grown by Langmuir-Blodgett (LB) onto silicon substrates. The effects of two different bottom electrodes namely Al and LaNiO3 (LNO) are investigated. Temperature dependence of dielectric constant shows that the film grown on the Al has a better dielectric response. X-ray diffraction indicates that more defects or gauche segments exist in film on LNO, which lead to deterioration of dielectric property.
Acknowledgment
This work was sponsored by Natural Science Foundation of China (Grant No. 60221502, 60777044, and 60771057), and Natural Science Foundation of Shanghai (No. 07JC14018, and 07ZR14129). We also wish to thank the Chinese Scholarship Council-Ecole Centrale Paris program.