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Abstract
c-axis-oriented epitaxial 1.2-μm PbMg0.047Nb0.095Zr0.416Ti0.442O3 (PMNZT) films with a comparatively large piezoelectric coefficient d 33 (=90 pC/N) fabricated on Pt(100)/MgO(100) substrates by metalorganic decomposition were treated by hot isostatic pressing (HIP). The HIP-pressure dependence on d 33 of the 1.2-μm PMNZT samples treated at 850°C for 1 h under Ar/O2 mixed gas pressures of 49–196 MPa was investigated. The d 33 value of the HIP-treated samples was almost constant (=60 pC/N), independently of the amplitude in pressure. Although the HIP treatment hardly contributes to an improvement on d 33, it can be expected to minimize the deviation of d 33 and provide highly-reliable piezoelectric elements.