Influence of Domain Switching and Domain Wall Bending on the Electrical Permittivity of PZT Thin Films

Abstract

The electrical permittivity dependence on the electric bias field was investigated in Pb(Zr_0.53, Ti_0.47)O₃ films. The results revealed the existence of two mechanisms contributing to the permittivity. The first one was related to the domain switching, which was responsible for a strong nonlinear dielectric response. The second mechanism was associated with the non-180° domain wall vibrations, which presented a reasonable linear electrical behavior with the applied field, contributing always to the permittivity independently of the poling state of the sample. The reduction of the electrical permittivity with increasing the bias field was related to the bending of non-180° domain walls.

Keywords:

• Ferroelectrics
• domain walls
• permittivity
• PZT
• thin films

Acknowledgment

The authors thank FAPESP and CNPq for financial support.