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Ferroelectrics Volume 410, 2010 - Issue 1
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SECTION K2: MULTIFERROICS AND APPLICATIONS

Structural, Dielectric and Ferroelectric Properties of Ti-Modified 0.72BiFeO3–0.28PbTiO3 Multiferroic Thin Films Prepared by Pulsed Laser Deposition

Ling Chen Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an, 710049, China; Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
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Wei Ren Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an, 710049, China
,
Weimin Zhu Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
,
Zuo-Guang Ye Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an, 710049, China; Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
,
Peng Shi Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an, 710049, China
,
Xiaofeng Chen Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an, 710049, China
,
Xiaoqing Wu Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an, 710049, China
&
Xi Yao Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an, 710049, China
 show all
Pages 42-49 | Received 23 Aug 2009, Published online: 20 Jan 2011
 
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Abstract

Ti-modified 0.72BiFeO3–0.28PbTiO3 thin films were prepared on Pt/Ti/SiO2/Si substrates by pulsed laser deposition under different oxygen pressures from 2 Pa to 15 Pa. The microstructures and electrical properties were investigated. Tetragonal (001) preferential orientation was observed in all films under different oxygen atmosphere pressures. The electrical properties of the thin films have been investigated for various deposition conditions. The dielectric constant and double remanent polarization were found to be 550 and 80 μC/cm2, respectively, for the thin film deposited at an oxygen atmosphere of 10 Pa and a substrate temperature of 680°C.

Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grants Nos. 50728201 and U0634006) and the Shaanxi Province International Collaboration Program (Grant No. 2009KW-12), the Natural Science and Engineering Research Council of Canada (NSERC), and the U.S. Office of Naval Research.

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