Synthesis, Crystal Growth, Structural, Dielectric and Ferroelectric Properties of N-Acetyl Glycine Phosphite (AGPI) Single Crystals

Abstract

Single crystals of N-Acetyl Glycine Phosphite (AGPI) were grown from aqueous solution by low temperature solution growth technique. Formation of the new crystal has been confirmed by single crystal XRD studies. AGPI belongs to monoclinic system with cell parameters a = 7.419 Å, b = 8.487 Å, c = 9.791 Å. Crystalline quality was found using rocking curve. The presence of functional groups were estimated qualitatively by FTIR analysis. The dielectric studies were carried out to identify the phase transition temperature and to find the dielectric constant. Hysteresis studies were carried out to identify the ferroelectric nature of the material. AFM studies were carried out to understand the ferroelectric surface and the domain structure.

Keywords:

• Crystal growth
• AGPI crystal
• SXRD
• HRXRD
• Ferroelectric materials

Acknowledgments

The authors are thankful to the Management, VIT University, Vellore, Tamil Nadu, India for their constant support and encouragement.