Abstract
In the present work, the posted sintered annealing method was applied for B2O3 doped Ba(Ti0.9Sn0.1)O3 ceramics. The ceramics were fabricated via a solid state reaction method: sintered at 1350°C for 24 h followed by annealing at 1100°C for 4–32 h. Many electrical properties of the ceramics annealed at various annealing times were investigated with a variety of methods. Annealing for 4 h produced a sharper phase transition with high dielectric constant. The high dielectric constant of 27,000 was recorded at ferroelectric to paraelectric phase transition temperature of 38°C. This sample also showed a high dielectric tunability of 70%. Ferroelectric performance of the sample was also improved. The improvements in electrical properties were related to the chemical homogeneity of the sample after annealing.
Acknowledgments
The authors would like to thank the Office of the Higher Education Commission (OHEC) for supporting by grant fund. This work was also supported by the Faculty of Science and Graduate School Chiang Mai University, and The Thailand Research Fund (TRF).