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Ferroelectrics Volume 419, 2011 - Issue 1
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Original Articles

Barium Strontium Zirconate Titanate (Ba,Sr)(Zr,Ti)O3 Thin Films for Tunable Microwave Applications

N. Y. Chan Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
,
Y. Wang Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
&
H. L. W. Chan Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
Pages 33-38 | Received 12 Aug 2010, Published online: 25 Oct 2011
 
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Abstract

(Ba0.55Sr0.45)(Zr0.1Ti0.9)O3 (BSZT) thin films were deposited by pulsed laser deposition on LSAT(001) substrates. X-ray diffraction characterization reveals a good quality of crystallization and epitaxial nature of the films. The in-plane dielectric properties of the films were characterized over a wide frequency range from 50 MHz to 20 GHz by using ring resonator-structured samples. Based on the S-parameter measurements and electromagnetic simulation it was found that microwave dielectric constant of the BSZT thin film is ∼350. Large dielectric tunability was also observed in this material.

Acknowledgments

The authors thank Dr L. X. He for helpful discussions. Support from the HKSAR ITF project (K-ZS0B) and Centre for Smart Materials of the Hong Kong Polytechnic University are acknowledged.

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