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Ferroelectrics Volume 433, 2012 - Issue 1
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Original Articles

Nanoscale Probing of High Photovoltages at 109° Domain Walls

J. Seidel Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, USA; Department of Physics, University of California, Berkeley, USA; School of Materials Science & Engineering, University of New South Wales, Sydney, Australia
,
S.-Y. Yang Department of Materials Science and Engineering, University of California, Berkeley, USA
,
E. Alarcón-Lladó Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, USA; Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland
,
J. W. Ager III Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, USA
&
R. Ramesh Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, USA; Department of Physics, University of California, Berkeley, USA; Department of Materials Science and Engineering, University of California, Berkeley, USA
Pages 123-126 | Received 03 Jan 2012, Accepted 12 Jan 2012, Published online: 12 Sep 2012
 
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Abstract

We report the direct observation of nanoscale photovoltaic current-voltage properties associated with directional steps of the electrostatic potential at 109° domain walls in ferroelectric BiFeO3 thin films with highly ordered ferroelectric stripe domains. The unidirectional photovoltaic effect along the net-in-plane polarization direction is shown to exhibit anomalies at the micro- and nanoscale due to local differences in mesoscopic domain structure. Very high initial photovoltages for small electrode spacings are observed using a conductive AFM tip as one of the electrodes in photovoltaic I-V measurements.

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