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Original Articles

Study the Raman Spectra and Dielectric Properties of Hexagonal BaTi1-xGaxO3 Ceramics

Pages 129-136 | Received 21 May 2012, Accepted 15 Aug 2012, Published online: 21 Dec 2012
 

Abstract

A series of polycrystalline Ga-doped Barium titanate (BaTi1-xGaxO3) were synthesized for the studies on the dopant-concentration dependence of Raman spectra and dielectric properties. The Qx f value of Ga-doping samples increases up to about 20% of Ga concentration, but the dielectric constant (K-value) decreases while the A1g phonon mode (636 cm−1) experiences an increasing red-shift. The phonon mode becomes soft with Ga-ion increasing, and the FWHM of Raman peak increases with Ga-ion increasing until tetragonal structure appeared. The effective ionic weight, ionic radii and Coulomb interaction are important influences, which induce the chemical pressure and reduce the excess charge in Ti-site in the Ga-doping h-BaTiO3 system. The relation between Raman mode shifter and K-value, and the correlation of the Qx f value and the FWHM of related phonon vibrations have been reported and examined.

Acknowledgments

The author thanks for Prof. C.-T. Chia of department of physic, National Taiwan Normal University for his help in Raman spectra measurement and useful discussion. The author is also indebted to the Prof. Y.-C. Chen of department of physic, National Cheng Kung University for her kind supplying of dielectric properties measurement.

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