Abstract
The as-grown aged and thermally annealed at 720 K and 820 K PbTiO3 crystals were prepared. The ɛ′(T,f) and σAC(T,f) were measured at radio frequencies. Samples heated at 720 K shown resistive switching to metallic-type σAC(T). The resistivity switching was confirmed by RDC(T) measurement. The samples annealed at 820 K were rejuvenated, exhibited Curie-Weiss dependence above TC = 750 K and semiconductor conductivity. Annealing induced changes in shape of the Pb 4f, Ti 2p, O 1s, and VB XPS lines. We propose a model related to ionic migration toward FE domain walls and to vortices which provide conducting channels.