Low Temperature Compatible Hafnium Oxide Based Ferroelectrics

Abstract

Gd:HfO₂ is shown to exhibit remarkable ferroelectric properties even when annealed with a thermal budget down to 450 °C for 10 min, which allows new integrations schemes in semiconductor fabrication. Anneals at lower thermal budget also seem to increase the phase fractions of higher symmetry phases. Two dopants reported to induce ferroelectricity in a wide concentration window are studied since also a wider range for the annealing conditions is expected. Both Sr:HfO₂ and Gd:HfO₂ films exhibit comparable wake-up and fatigue behavior.

Keywords:

• Hafnium oxide
• wake-up
• fatigue
• strontium
• gadolinium
• anneal

Funding

This work was financially supported by the European Fund for Regional Development and the Free State of Saxony.