Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films

Abstract

Ferroelectric switching in circular and ring capacitors has been performed using a stroboscopic mode of piezoresponse force microscopy. A simple geometric model incorporating the characteristic domain wall motion is sufficient to describe the switching of circular capacitors but which however breaks down when attempting to describe the ring switching. Analysis of the switching dynamics implies that the domain wall moves faster along the perimeter of both the circle and ring electrode structures.

Keywords:

• Domains
• domain walls
• ferroelectric switching
• thin films
• PZT
• PFM

Funding

The research leading to these results has received funding from the European Research Council under the EU 7th Framework Program (FP7/2007-2013)/ERC Grant Agreement No. 268058 Mobile-W. The Swiss National Science Foundation (Grant No. 200020_140539) and the Swiss Federal Office of Education and Science (COST 0904 Action) are acknowledged for additional financial support.