Study of NdAlO₃ Dielectric Thin Films by Sol-Gel Method

Abstract

Electrical properties and microstructure of NdAlO₃ thin films prepared by sol-gel method on Si substrates at different preheating temperatures have been investigated. The structure of the materials is studied using X-ray diffraction, and the microstructure is analyzed using scanning electron microscopy. The diffraction pattern showed that the deposited films exhibited an amorphous microstructure. The dependence of the physical and electrical characteristics on various preheating temperatures was also investigated. At an preheating temperature of 400°C, the NdAlO₃ films with 65 nm thickness possess an leakage current density of 9.5×10⁻⁷ A/cm² at an electrical field of 10 kV/cm.

• Keywords Sol-gel method
• electrical properties
• microstructure
• NdAlO₃ thin films

Funding

This work was supported by the National Science Council of the Republic of China under grant MOST 103-2221-E-239-008.