Abstract
Electrical properties of the (1-x)PZT-xSBT ceramics (0.1≤x≤0.3) were investigated in comparison with pure PZT and SBT ceramics. It was found that the dielectric constant increased with small addition of SBT (x = 0.1) into PZT. The hysteresis loop measurement demonstrated that the PZT-SBT ceramics showed larger remanent polarization than pure PZT and less coercive filed than pure SBT ceramic. Strain behavior showed a symmetric butterfly curve in the compositions with 0≤x≤0.3 but the low strain obtained was found in pure SBT. This research suggested that 0.9PZT-0.1SBT ceramic is a promising material to be further utilized in ferroelectric memory devices.
Funding
This work is financially supported by the Thailand Research Fund (TRF) under Grant No. RSA5780032, Chiang Mai University and the Australian Research Council under Grant No. DP0988182. JG acknowledges support from DE120102644. ON would like to acknowledge financial support from the TRF through the Royal Golden Jubilee Ph.D. Program.