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Ferroelectrics Volume 492, 2016 - Issue 1: Proceedings of The 9th Asian Meeting on Ferroelectrics (AMF-9)
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Original Articles

Local Piezoresponse and Electrical Behavior of Multiferroic BiFe0.95Mn0.05O3 Epitaxial Thin Films Deposited Under Different Oxygen Pressure

Huizhu YuKey Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai200050, China;University of Chinese Academy of Sciences, Beijing100039, China
,
Kunqi XuKey Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai200050, China;University of Chinese Academy of Sciences, Beijing100039, China
,
Kunyu ZhaoKey Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai200050, China
,
Guorong LiKey Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai200050, China
,
Huarong ZengKey Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai200050, ChinaCorrespondence[email protected]
,
Wei WangState Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
&
Xiaomin LiState Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
 show all
Pages 69-75 | Received 26 Oct 2014, Accepted 19 Jan 2015, Published online: 17 Feb 2016
 
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Abstract

Multiferroic BiFe0.95Mn0.05O3 (BFMO) epitaxial thin films were grown on SrRuO3, SrTiO3 and TiN-buffered (001)-oriented Si substrates under different oxygen pressure by pulsed laser deposition. The influence of oxygen pressure on the microstructures, domain configurations and their local piezoresponse and electrical behaviors were investigated by the piezoresponse force microcopy and conductive atomic force microscopy. BFMO thin film at low oxygen pressure was found to demonstrate pure phase state, inhomogeneous piezoresponse and low leakage behavior with diode-like behavior, while high oxygen pressure leads to impurity Bi2O3 phase-enclosed BFMO films with higher leakage current above 2 nA, revealing the importance of the oxygen pressure in governing the physical properties of BFMO films.

Funding

This work is supported by the National Basic Research Program of China under Grant No 2012CB933004 and 2015CB654605, the National Natural Science Foundation of China under Grant No 51121064, and the Nanotechnology Project of Shanghai Science and Technology Committee under Grant No 11nm0502800.

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