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Original Articles

Dielectric and Piezoelectric Properties of Microwave Sintered Ba1-xRexTiO3 Ceramics

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Pages 175-183 | Accepted 04 Mar 2015, Published online: 17 Dec 2015
 

Abstract

Lead free piezoelectric ceramic Ba1-xRexTiO3 (Re = Ce and Pr with x = 0.003) were prepared through microwave sintering route using 5% SiO2 as sintering aid. The dielectric, impedance and piezoelectric properties were studied over a wide range of temperature. Pr doped barium titanate showed higher value of dielectric constant around 15,099. The electromechanical coupling factors at 225°C are 0.9985 and 0.9978 for Ce and Pr doped barium titanate ceramics respectively. The d33 values for Ce and Pr doped barium titanate ceramics at 225°C are 368 nm.V−1 and 470 nm.V−1 respectively. The d33 value decreased with the increase of temperature and the values at 600°C are 10 nm.V−1 and 8 nm.V−1 for Ce and Pr doped barium titanate ceramics respectively.

Funding

The authors would like to thank DST and DRDO, Delhi, India for financial support in carrying the present research work during my tenure as JRF and SRF.

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