Effect of oxygen vacancies on crystallization and piezoelectric performance of PZT

ABSTRACT

Emphasis on effect of oxygen on structural and ferroelectric properties of lead zirconia titanate thin film is reported. The thin film is prepared using RF sputtering and annealed in air atmosphere to introduce oxygen vacancies. The photoelectron spectroscopy data reveal lead rich film, which decreases with annealing temperature, while oxygen content decreases from 59.32–55.82% after annealing. The decrease in oxygen causes pyrochlore formation along with perovskite phase in annealed film. The polarization graph shows reduction in domain wall mobility and film polarization due to oxygen vacancy. The pure perovskite phase is achieved using CFA by inserting O₂ in annealing chamber.

KEYWORDS:

• Thin films
• sputtering
• photoelectron spectroscopy
• ferroelectricity

Funding

Abhay Joshi is thankful to the Department of Science and Technology, Government of India for financial support in terms of Junior research fellowship.