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Abstract
The electron beam domain patterning of MgO-doped congruent lithium niobate (LN) single crystals covered by electron beam resist layer were studied for various layer thicknesses and electron accelerating voltages. The obtained domain patterns were divided in four types. The increasing of the domain structure quality under presence of the resist layer on irradiated surface was confirmed. This effect was attributed to high concentration of the electron traps in resist, which localized incident electrons in limited volume over LN surface and formed effective electrode. The voltage dependence of space charge localization relative to the LN surface was studied by computer simulation.
Acknowledgments
The equipment of the Ural Center of Shared Use “Modern nanotechnology” UrFU was used.
Funding
The research was made possible in part by the Ministry of Education and Science of Russian Federation (contract No. 14.594.21.0011), by RFBR (grants 13-02-01391-a, 14-02-31255-mol_a), and by Ural Federal University development program with the financial support of young scientists.