Switching processes of ferroelectric thin films in weak pulsed fields

ABSTRACT

The motion of domain walls in lead titanate PbTiO₃ and lead zirconate titanate Pb(Zr_0.5Ti_0.5)O₃ thin films using switching currents in weak rectangular pulsed fields was studied. Deviation from a strictly exponential dependence of the domain wall velocity on the strength of an applied electric field was established. The dynamic factor μ, which determines the degree of deviation from the exponential dependence and depends on the film thickness, temperature and composition of the films, was calculated.

KEYWORDS:

• Ferroelectric thin films
• domain wall
• creep motion
• critical exponent

Acknowledgment

This study was supported by the Russian Science Foundation (project № 14-12-00583).