Leakage currents in porous PZT films

ABSTRACT

Charge transport phenomena in porous ceramic PZT films are discussed. The leakage current has been found to be in PZT porous films is 1–1.5 orders higher than for the dense film throughout the whole bias voltage. In the low fields region (∼40–160 kV/cm) the main charge transport mechanism is the ohmic conductivity. Static (steady state) conductivity of porous PZT films is 1–2 orders higher than of dense film. The main possible charge transport mechanism in the high fields region (≥160–180 kV/cm) is the space-charge-limited conduction.

KEYWORDS:

• Ferroelectrics
• thin film
• PZT
• porous ceramic films
• leakage currents

Funding

This work was supported by the program of Ministry of Education and Science (N 1079).

Notes

¹ We use ohmic current concept, though not only ohmic conduction may be responsible for linear I(V) current–voltage relationships at low voltages [19].