Peculiarities of C-V characteristics of PZT films depending on annealing temperature

ABSTRACT

We investigated the behavior of the capacitance and dielectric loss tangent under bias voltage in Pt/PZT/Pt thin film structures annealed at 540–570°C. Internal field in PZT films was determined on a basis of C-V characteristics. Also, the frequency dependence of the dielectric response of these films was obtained. A correlation between dielectric properties and the microstructure of the films was revealed. Observed strong dependences of electrophysical characteristics of PZT films on the annealing temperatures are evidence in favor of this correlation.

KEYWORDS:

• Ferroelectric
• PZT thin films
• capacitance-voltage characteristics
• tangent of dielectric loss

Funding

This work was supported by Russian Foundation for Basic Research (project No. 16-32-00420-mol_a). Also, I.P. Pronin acknowledges Russian Foundation for Basic Research (project No. 16-02-00632).