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Ferroelectrics Volume 510, 2017 - Issue 1
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Original Articles

Improvement of dielectric and energy storage properties in BaTiO3 ceramics with BiNbO4 modified

Jiapeng HuangState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, P. R. China;Collaboration Innovation Center of Electric Materials and Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, P. R. China
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Jihua ZhangState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, P. R. China;Collaboration Innovation Center of Electric Materials and Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, P. R. ChinaCorrespondence[email protected]
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Hao YuState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, P. R. China;Collaboration Innovation Center of Electric Materials and Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, P. R. China
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Meng WeiState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, P. R. China;Collaboration Innovation Center of Electric Materials and Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, P. R. China
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Hongwei ChenState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, P. R. China;Collaboration Innovation Center of Electric Materials and Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, P. R. China
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Chuanren YangState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, P. R. China;Collaboration Innovation Center of Electric Materials and Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, P. R. China
Pages 8-15 | Received 29 Jul 2016, Accepted 05 Nov 2016, Published online: 30 Jun 2017
 
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ABSTRACT

(1-x) BT-xBiNbO4 (BT-BN, x = 0, 0.05, 0.1, 0.2, 0.3 and 0.4) bulk ceramics were fabricated by conventional solid state method. XRD analysis suggests formation of perovskite structure. With increasing of BN (x ≥ 0.1), a ceramic material, the coexistence of a small quantity of secondary phase particles and perovskite phase, was obtained. Through analyzing the characteristics of the dielectric spectrum and P-E hysteresis loops, a very stable energy storage density in wide frequency band and temperature ranges was found in BT-BN bulk ceramics. With the addition of BN, BT's ferroelectric properties are suppressed, hysteresis loops show slim P-E hysteresis loops, which meet relaxor ferroelectrics features. Ceramics show improved energy storage density and energy storage efficiency. The recoverable energy storage of the modified ceramics is 0.31 J/cm3, which is 3.8 times higher than pure BT ceramics, and the efficiency is 93.97%, the withstand voltage can reach 11.72 kV/mm in sample(x = 0.2) within the measurement scope. It may have practical significance for frequency-stable energy storage applications.

Funding

This work was supported by the Innovation Foundation of Collaboration Center of Electronic Materials and Devices (No. ICEM2015-4002).

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