Intrinsic defects in ZnO films deposited by RF sputtering

ABSTRACT

Zinc oxide thin films were deposited on Si (100) substrates using RF magnetron sputtering by adjusting sputtering power. The film properties were characterized by scanning electron microscopy with energy dispersive X-Ray spectroscopy, X-ray diffraction spectrometer and photoluminescence spectroscopy. Intrinsic defects could be adjusted just by modifying the sputtering power. Variation of Zn to O ratio, defects and their relative concentration of the films with the sputtering power were investigated in details.

KEYWORDS:

• ZnO films
• RF sputtering
• intrinsic defects
• Zn/O ratio
• sputtering power

Additional information

Funding

This work is supported by the National Science Foundation of China (Grant No.11374041) and the Fundamental Research Funds for the Central Universities.