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SECTION F: Novel Applications, Approaches and Device Concepts

Depth profiling of dopant concentration and pyroelectric properties of LiNbO3 single crystals treated at high-temperature in the presence of metal ions

ORCID Icon, , , , , , & show all
Pages 146-152 | Received 14 May 2018, Accepted 31 Oct 2018, Published online: 04 Jun 2019
 

Abstract

The dopant and pyroelectric coefficient depth profiles of LiNbO3 single crystals grown by Czochralski method were investigated. Doping was performed after crystal growth by thermal diffusion at elevated temperatures. Diffusion doping did not deteriorate the pyroelectric properties of the crystal.

Additional information

Funding

This work was supported by the German Research Foundation (DFG) within the Collaborative Research Center/Transregio 39 »PT-PIESA« (Subproject C08) and by the Ukrainian Ministry of Education and Science (project DB/MEZHA No. 0118U000273).

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