Abstract
Characteristic features of the PbZr0.54Ti0.46O3 formation in etched swift heavy ion tracks and investigations of dielectric properties of the obtained structures are reported in this work. PbZr0.54Ti0.46O3 compound is formed as a result of thermal treatment of film structures with identical composition being ion-beam sputtered on Si/SiO2 substrates. During the temperature dependence studies of the Si/SiO2 (PbZr0.54Ti0.46O3) structure at various frequencies their dispersion is obtained. It is shown that in the temperature range from 360 to 406°С the frequency dependence of the dielectric permittivity reaches maximum values which is explained by the presence of a ferroelectric phase transition.
Acknowledgments
The authors are grateful to M. Ploetner and B. Adolphi from the Dresden University of Technology for the measurements of the studied structures by means of the X-ray photoelectric spectroscopy. A support of the work in frames of the European project H2020-MSCA-RISE-2018-823942 ? FUNCOAT is gratefully acknowledged..