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Ferroelectrics Volume 554, 2020 - Issue 1
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Articles

Microstructure and ferroelectric properties of bi-excess Bi4Ti3O12 thin films grown on Si and Pt/Ti/SiO2/Si substrates

Yong LiuCollege of Chemistry, Chemical Engineering and Materials Science, Zaozhuang University, Zaozhuang, ChinaCorrespondence[email protected]
,
Liqun FanCollege of Chemistry, Chemical Engineering and Materials Science, Zaozhuang University, Zaozhuang, China
,
Wentao YiCollege of Chemistry, Chemical Engineering and Materials Science, Zaozhuang University, Zaozhuang, China
,
Chunyan YanCollege of Chemistry, Chemical Engineering and Materials Science, Zaozhuang University, Zaozhuang, China
,
Jie MaCollege of Chemistry, Chemical Engineering and Materials Science, Zaozhuang University, Zaozhuang, China
,
Qiyan JiCollege of Chemistry, Chemical Engineering and Materials Science, Zaozhuang University, Zaozhuang, China
&
Qiaoli LinCollege of Chemistry, Chemical Engineering and Materials Science, Zaozhuang University, Zaozhuang, China
 show all
Pages 144-149 | Received 11 Mar 2019, Accepted 05 Sep 2019, Published online: 25 Feb 2020
 
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Abstract

Bismuth layer-structured ferroelectric Bi4Ti3O12 thin films have been deposited on n-type Si(111) and Pt(111)/Ti/SiO2/Si substrates using rf-magnetron sputtering process. The effects of substrates and annealing treatments on microstructure and ferroelectric properties were investigated. Scanning electron microscopy and X-ray diffraction patterns exhibited that the as-deposited thin films were noncystalline and transformed to crystalline Bi4Ti3O12 phase with a second phase of Bi12TiO20 after annealed at 700 °C. Ferroelectric properties showed that as-deposited thin film in metal-ferroelectric-semiconductor capacitor form and annealed thin film in metal-ferroelectric-metal form exhibited typical ferroelectric behaviors, wherein the values of remnant polarization were around 0.8 µC/cm2 and 4.8 µC/cm2, respectively.

Disclosure statement

The authors declare no financial/commercial conflicts of interest.

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