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Ferroelectrics Volume 572, 2021 - Issue 1
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Research Article

Energy storage and dielectric properties of PLZST-based antiferroelectric ceramics doped with BiNbO4

Yunfei Zhua State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;b Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu, ChinaView further author information
,
Hongwei Chena State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;b Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu, ChinaCorrespondence[email protected] [email protected]
View further author information
,
Meng Weia State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;b Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu, ChinaView further author information
,
Libin Gaoa State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;b Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu, ChinaView further author information
,
Jinyu Zhaoa State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;b Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu, ChinaView further author information
&
Jihua Zhanga State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;b Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu, ChinaCorrespondence[email protected] [email protected]
View further author information
Pages 1-12 | Received 16 Mar 2020, Accepted 12 Jul 2020, Published online: 09 Mar 2021
 
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Abstract

In this work, (1-x)(Pb0.97La0.02)(Zr0.5Sn0.44Ti0.06)O3-x BiNbO4 (x = 0–0.15) ceramics ((1-x)PLZST-xBiNbO4) were prepared by solid state reaction method. By changing the content of BiNbO4, the phase evolution, dielectric properties and energy storage properties were studied comprehensively. It is found that with the increase of BiNbO4 content, there are two peaks of dielectric constant. The mild BiNbO4 doping first destroyed the relaxation behavior of PLZST. Then with the increase in BiNbO4, the local defect dipole forms another weak coupling and reduce the antiferroelectric-ferroelectric phase transition field (EAFE-FE). When x = 0.05, the maximum energy density is 0.82 J/cm3, and the energy efficiency is 88%.

Additional information

Funding

This work was supported by the National Natural Science Foundation of China under Grant No. 50932002 and 51172035.

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