Features of the structure formation of PZT thin films by reactive plasma sputtering

Abstract

The electrophysical characteristics of the PZT film formed on a silicon by the method of high-frequency reactive plasma sputtering were studied, and their relationship with the structure of the film was established. In particular, the hysteresis in the capacitance-voltage characteristics of the metal - ferroelectric - semiconductor indicates the polarization of the film, which, in turn, indicates the presence of the perovskite phase in the PZT film. However, the crystallite size of this phase is so small that it cannot be detected by X-ray diffraction analysis.

Keywords:

• PZT
• lead zirconate-titanate
• thin films
• capacitance-voltage characteristics
• hysteresis

Acknowledgments

The results were obtained using the equipment of the centers for collective usage “Microsystem Engineering and Integrated Sensory”, “Nanotechnologies” and Research Institute of Physics of Southern Federal University.

Additional information

Funding

The formation of the MFS structures was financially supported by the Ministry of Science and Higher Education of the Russian Federation under state assignment in the field of scientific activity No. 0852-2020-0015. Measurement of PZT films characteristics were supported by the Russian Foundation of Basic Research (RFBR) under Grant #18-29-11019.