Dielectric and pyroelectric properties of AlN single-crystal layers grown by chloride-hydride epitaxy

Abstract

This work presents the results of a comparative study of dielectric and pyroelectric properties of aluminum nitride (AlN) single-layer and multilayer samples with a thickness of 100 ÷ 200 μm grown in the [0001] direction by chloride-hydride epitaxy. A silicon wafer covered by silicon carbide nanolayer grown by solid-phase substitution (SiC/(111)Si) was used as a substrate for subsequent growth of AlN single crystalline layers. The samples were formed by layer-by-layer growth. It is shown that such method makes it possible to change the orientation of the polar hexagonal axis in AlN single crystals.

Keywords:

• chloride-hydride vapor phase epitaxy
• aluminum nitride
• dielectric and pyroelectric properties

Acknowledgments

The authors are grateful to M. V. Staritsyn for conducting an electron microscopic study of a cleavage of a three-layer structure of aluminum nitride.

Additional information

Funding

This work was partially supported by the Russian Science Foundation, project No. 20-12-00193.