Abstract
FeGe alloys were accumulated on the Si substrates using the electron beam deposition technique. XRD technique was used to analyze the dependence of the crystal and phase of FeGe alloys. By applying Scherrer’s method, the theoretically calculated crystallite dimension comparisons were performed. Depending on the concentration of increasing Ge, the size of the crystalline increases from 44.8 to 51.8 nm. The morphology and grain size changes of the alloys were compared with SEM in terms of their surface distribution. Dielectric properties, tangent loss, and AC conductivity (σac) were demonstrated depending on the frequency.
Disclosure statement
No potential conflict of interest was reported by the authors.