The study of the triboelectric potential in h-BN and MoS₂ thin layers

Abstract

The values of triboelectric potentials in the thin films of h-BN and MoS₂ were studied by the methods of SPM. The dependence of the triboelectric potential on the loading force and the value of the potential on the SPM probe was determined. It was established that the triboelectric potential value depended on the difference in the Fermi levels (and, accordingly, the difference in the work function values) of the SPM probe and the layer under study. The density of the triboelectric charge in the thin films h-BN and MoS₂ was σ_tr ∼ 2 ÷ 3 mC/m².

Keywords:

• Triboelectricity
• triboelectric nanogenerators
• scanning probe microscopy

Additional information

Funding

The study was supported by the Russian Science Foundation, grant no. 22-22-20084 (https://rscf.ru/project/22-22-20084/) and by the St. Petersburg Science Foundation, grant no. 24/2022 from April 14, 2022.