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Ferroelectrics Volume 612, 2023 - Issue 1
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Research Article

30 GHz ferroelectric phase shifter on silicon carbide

A. TumarkinDepartment of Physical Electronics and Technology, Electrotechnical University, St. Petersburg, RussiaCorrespondence[email protected]
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,
A. AltynnikovDepartment of Physical Electronics and Technology, Electrotechnical University, St. Petersburg, RussiaView further author information
,
R. PlatonovDepartment of Physical Electronics and Technology, Electrotechnical University, St. Petersburg, RussiaView further author information
,
A. GagarinDepartment of Physical Electronics and Technology, Electrotechnical University, St. Petersburg, RussiaView further author information
,
E. SapegoDepartment of Physical Electronics and Technology, Electrotechnical University, St. Petersburg, RussiaView further author information
,
A. BogdanDepartment of Physical Electronics and Technology, Electrotechnical University, St. Petersburg, RussiaView further author information
&
A. KaramovDepartment of Physical Electronics and Technology, Electrotechnical University, St. Petersburg, RussiaView further author information
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Pages 114-122 | Received 18 Sep 2022, Accepted 25 Apr 2023, Published online: 29 Jul 2023
 
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Abstract

Thin ferroelectric barium-strontium titanate (BST) films of high structure quality have been grown on semi-insulating silicon carbide substrates. The crystal structure and elemental composition of the obtained films were studied by the X-ray diffraction and Medium Energy Ions Scattering. Planar capacitors based on these BST films reveal the combination of high tunability and low losses at microwaves. 30 GHz ferroelectric phase shifter demonstrating a figure of merit of 22 deg/dB with a phase shift of Δϕ = 220 deg is implemented based on BST films on silicon carbide substrate.

Additional information

Funding

This work was supported by the Ministry of Science and Higher Education of Russian Federation under Grant No. 075-01438-22-07 – FSEE-2022-0015.

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