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Abstract
The single crystal of BiNbO4 was grown by Czochralski technique and determined its crystallographic axes at room temperature. The optimum conditions for pulling and rotation speeds were 1.2mm/hr and 15 rpm respectively at 1,130 °C. BiNbO4 was found to undergo two phase transitions at 562 °C and 470 °C from temperature dependence measurements of dielectric constants and Raman spectra were studied for X(ZZ)Y, X(YX)Y, X(YZ)Y geometries.