Switching of the direction of polarization in ferroelectric thin films can be used as a mechanism for space-efficient memory storage in microcircuits. The fields required for adequate switching rates are of the order of 5 × 105 volts/cm. At these high fields, there are several potential mechanisms for the motion of charged species in the film with a resulting degradation of properties. The defect chemistry and charge transport mechanisms in perovskite-based systems are reviewed, and their pertinence for the development of stable, reliable memory elements is discussed.
Charge motion in ferroelectric thin films
Reprints and Corporate Permissions
Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?
To request a reprint or corporate permissions for this article, please click on the relevant link below:
Academic Permissions
Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?
Obtain permissions instantly via Rightslink by clicking on the button below:
If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.
Related Research Data
Related research
People also read lists articles that other readers of this article have read.
Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.
Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.