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Section II: Invited papers

TfI14: Ferroelectric thin films for memory applications: Sol-gel processing and decomposition of organo-metallic compounds

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Pages 91-96 | Published online: 10 Feb 2011
 

Abstract

Pb(ZrxTi1–x)O3 (PZT), Bi4Ti3O12 and BaTiO3 films as well as SrTiO3 films are considered for nonvolatile memory applications and high density dynamic random access memories. These perovskite systems are frequently deposited by a sol-gel or MOD technique. Processing and the properties of the thin films are summarized.

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