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Ferroelectrics Volume 183, 1996 - Issue 1
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Original Articles

Device physics of ferroelectric memories

J. F. Scott Faculty of Applied Science, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne, Vic., 3001, Australia; Faculty of Science, University of New South Wales, Sydney, NSW, 2052, Australia
Pages 51-63 | Received 05 May 1995, Published online: 26 Oct 2011
 
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Abstract

A status report is given on high-dielectric (usually ferroelectric) thin-films of fine-grained ceramics utilized for ferroelectric memories, including active memory elements in nonvolatile random access memories (NV-RAMs), passive capacitors in dynamic random access memories (DRAMs), and ferroelectric gates in ferroelectric field-effect transistors (FEMFETs) configured for non-destructive read-out (NDRO) memories. Emphasis is upon breakdown fields, leakage current, fatigue, and retention. Both the BaxSr1-xTiO3 (BST) family and the SrBi2Ta2O9 family of layer-structure perovskites are discussed. The review ends with a list of unsolved physics questions about ferroelectric thin films that will be helpful in further engineering developments.

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