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Original Articles

Lanthanum doped lead germanate: A new NTC semiconductor

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Pages 143-150 | Received 06 Jul 1996, Accepted 14 Feb 1997, Published online: 07 Mar 2011
 

Abstract

Pure (LG) and 0.5 wt%(LG1)lanthanum doped lead germanate single crystals were grown by controlled cooling of the melt. Variation of d.c. conductivity with temperature was studied for these samples. Both LG and LG1 show semiconducting behaviour. At room temperature the conductivity is reduced because of lanthanun doping. Estimated activation energies in ferroelectric phase and paraclectric phase show that activation energy in ferroelectric phase is greater than that in paraelectric phase for both LG and LG1. The possible mechanism for electrical conduction is discussed.

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