Large area pulsed laser deposition of aurivilliustype layered perovskite thin films

Abstract

Thin films of Aurivillius-type layered perovskites of Bi₄Ti₃O₁₂ and SrBi₂Ta₂O₉ have been epitaxially deposited by PLD on SrTiO₃ single crystal substrates. Bi₄Ti₃O₁₂ has been deposited as well on a CeO₂/YSZ/Si(100) buffer layer, and on Pt-coated oxidized silicon for electrical measurements. Using a new technique for large area PLD, Bi₄Ti₃O₁₂ has also been deposited on a whole (100)-oriented 3′′ Si wafer. The obtained films have a homogeneous thickness over the whole wafer corresponding to an area of about 45 cm². The composition, structure, and electrical properties of the films are presented.